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Fraunhofer IAF develops first monolithically integrated GaN half bridge for voltage converters for e-mobility

The Fraunhofer Institute for Applied Solid State Physics IAF has recently produced and demonstrated a monolithic integrated GaN half bridge for the important 600 volt class. This will be the first demonstration of its kind in the power electronics standard volt class for grid-connected electrical devices which range from washing machines to electric vehicles. With a significant improvement in electronic properties as compare to the traditional voltage converters, monolithically integrated half bridges are more compact and are easier to assemble with an improved reliability. “This innovative approach brings a new level of power density, efficiency, robustness, functionality and reliability to e-mobility,” said Dr. Patrick Waltereit, deputy head of the Power Electronics business unit at Fraunhofer IAF.

 

 

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